Silicon carbide wafer bonding by modified surface activated bonding method-Reference-Cited by-同舟云学术

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Silicon carbide wafer bonding by modified surface activated bonding method

Published:2015-01-15 Issue:3 Volume:54 Page:030214
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suga Tadatomo,Mu Fengwen,Fujino Masahisa,Takahashi Yoshikazu,Nakazawa Haruo,Iguchi Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=3/a=030214/pdf

Reference30 articles.

1. Loss comparison between SiC, hybrid Si/SiC, and Si devices in direct AC/AC converters

2. Device design assessment of 4H–SiC n-IGBT – A simulation study

3. An overview of SiC power devices

4. SiC technologies for future energy electronics

5. Demonstration of Lateral IGBTs in 4H-SiC

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1. Room-Temperature Bonding of Indium Phosphide Wafers and Their Atomic Structure at the Bond Interface;ACS Applied Electronic Materials;2023-11-08

2. Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC;Journal of Vacuum Science & Technology A;2023-09-12

3. Plasma-enhanced atomic layer deposition of molybdenum carbide and carbonitride films using bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and an H2/N2/Ar plasma;Journal of Vacuum Science & Technology A;2023-09-12

4. Selective Self-Assembled Monolayer for Copper Surface Protection During Plasma Activation of Hybrid-Bonded Wafers;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. Fabrication of heterogeneous LNOI photonics wafers through room temperature wafer bonding using activated Si atomic layer of LiNbO3, glass, and sapphire;Applied Surface Science;2023-05

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