Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer-Reference-Cited by-同舟云学术

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Large-area vertically stacked MoTe2/β-Ga2O3 p-n heterojunction realized by PVP/PVA assisted transfer

Published:2020-11 Issue: Volume:530 Page:147276
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xiao Yifan,Liu Wenjun,Liu Chaochao,Yu Hongyu,Liu Huan,Han Jun,Liu Weiguo,Zhang Wenfeng,Wu Xiaohan,Ding Shijin,Liu Zheng,Zhang David Wei

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference59 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics;Higashiwaki;Appl. Phys. Lett.,2018

2. Development of gallium oxide power devices;Higashiwaki;Physica Status Solidi A.,2014

3. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS;Pearton;J. Appl. Phys.,2018

4. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

5. Semiconductors for high-voltage, vertical channel field-effect transistors;Baliga;J. Appl. Phys.,1982

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