Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices-Reference-Cited by-同舟云学术

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Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices

Published:2022-10 Issue: Volume:27 Page:100777
ISSN:2542-5293
Container-title:Materials Today Physics
language:en
Short-container-title:Materials Today Physics

Author:

Venkata Prasad Chowdam,Rim You Seung^ORCID

Funder

Ministry of Trade, Industry and Energy

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science

Reference185 articles.

1. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans. Power Electron.,2014

2. Fundamentals of Power Semiconductor Devices;Baliga,2010

3. Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors;Chow;IEEE Trans. Electron. Dev.,2017

4. Wide-bandgap semiconductor materials: for their full bloom;Fujita;Jpn. J. Appl. Phys.,2015

5. Development of gallium oxide power device;Higashiwaki;Phys. Status Solidi A,2014

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