Affiliation:
1. Department of Electronics and Communications Engineering Pukyong National University 48513, 45 Yongso‐ro, Nam‐gu Busan Republic of Korea
2. PowerCubeSemi, Inc. 686, Cheonggyesan‐ro, Sujeong‐gu Seongnam‐si 13105 Republic of Korea
3. Department of Electrical Engineering, College of IT Convergence Gachon University 1342, Seongnam‐daero, Sujeong‐gu Seongnam‐si 13120 Gyeonggi‐do Republic of Korea
Abstract
A high‐performance self‐powered deep ultraviolet (DUV) photodetector based on the NiO/β‐Ga2O3 heterojunction is fabricated and analyzed. The NiO/β‐Ga2O3 heterojunction photodetectors are fabricated both with and without a post‐annealing process following NiO film deposition. Each photodetector structure is investigated through technology computer‐aided design simulations, including energy band diagram, trap density, and carrier concentration. The pristine self‐powered NiO/β‐Ga2O3 photodetector, lacking a post‐annealing process, exhibits partial Schottky contact formation between metal and NiO film, leading to performance degradation, including reduced responsivity, detectivity, and response time. On the other hand, the post‐annealed self‐powered NiO/β‐Ga2O3 photodetector demonstrates high performance such as a responsivity of 592.0 mA W−1, a detectivity of 4.30 × 1012 Jones, and response times of 30.93 ms and 72.32 ms, respectively. Therefore, the fabricated NiO/β‐Ga2O3 photodetector shows a promising potential for various applications requiring DUV detection without an external voltage bias.