Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules-Reference-Cited by-同舟云学术

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Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules

Published:2021-07 Issue: Volume:554 Page:149481
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chowdhury Tanzia^ORCID,Hidayat Romel^ORCID,Kim Hye-Lee,Mayangsari Tirta Rona,Cho Seongjae^ORCID,Park Sangjoon,Jung Jongwan,Lee Won-Jun

Funder

Korea Ministry of Trade Industry and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference48 articles.

1. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric;Yeo;IEEE Electron Device Lett.,2001

2. 3D NAND flash based on planar cells;Silvagni;Computers,2017

3. Characterization of the vertical position of the trapped charge in charge-trap flash memory;Kim;J. Semicond. Technol. Sci.,2017

4. Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy;Tzeng;J. Appl. Phys.,2006

5. Study on self-aligned contact oxide etching using C5F8∕O2∕Ar and C5F8∕O2∕Ar∕CH2F2 plasma;Kim;J. Vac. Sci. Technol. A,2005

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05

2. Chemisorption of silicon tetrachloride on silicon nitride: a density functional theory study;Physical Chemistry Chemical Physics;2024

3. Dry etching in the presence of physisorption of neutrals at lower temperatures;Journal of Vacuum Science & Technology A;2023-02-27

4. Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study;Physical Chemistry Chemical Physics;2023

5. Reduction of dielectric loss of ethylene propylene diene monomer (EPDM) with high barrier graphene (HBG) modified by heptadecafluoro-decyl-triethoxy silane;Journal of Materials Science: Materials in Electronics;2022-09-29

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