Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric-Reference-Cited by-同舟云学术

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Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

Published:2001-05 Issue:5 Volume:22 Page:227-229
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yee-Chia Yeo ,Qiang Lu ,Ranade P.,Takeuchi H.,Yang K.J.,Polishchuk I.,Tsu-Jae King ,Chenming Hu ,Song S.C.,Luan H.F.,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/19878/00919237.pdf?arnumber=919237

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