Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study-Reference-Cited by-同舟云学术

Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study

Published:2023 Issue:5 Volume:25 Page:3890-3899
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Hidayat Romel¹^ORCID,Kim Hye-Lee²^ORCID,Khumaini Khabib¹³^ORCID,Chowdhury Tanzia¹^ORCID,Mayangsari Tirta Rona³^ORCID,Cho Byungchul⁴,Park Sangjoon⁴,Lee Won-Jun¹²^ORCID

Affiliation:

1. Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea

2. Metal-organic Compounds Materials Research Center, Sejong University, Seoul, 05006, Republic of Korea

3. Department of Chemistry, Universitas Pertamina, Jakarta 12220, Indonesia

4. Wonik IPS, Pyeongtaek, 17709, Republic of Korea

Abstract

The mechanism underlying the selective etching of silicon oxide against silicon by HF vapor was elucidated by DFT calculations that showed lower activation energies for silicon oxide than for silicon.

Funder

Ministry of Trade, Industry and Energy

Korea Basic Science Institute

Korea Semiconductor Research Consortium

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP05456F

Reference46 articles.

1. R.Kohli , Developments in Surface Contamination and Cleaning , Elsevier Inc. , Oxford , 1st edn, 2017