Replacement fin processing for III–V on Si: From FinFets to nanowires-Reference-Cited by-同舟云学术

Replacement fin processing for III–V on Si: From FinFets to nanowires

Published:2016-01 Issue: Volume:115 Page:81-91
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Waldron Niamh,Merckling Clement,Teugels Lieve,Ong Patrick,Sebaai Farid,Barla Kathy,Collaert Nadine,Thean Voon-Yew (Aaron)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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3. Kim T-W et al. Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications. In: Electron devices meeting (IEDM), 2013 IEEE international; 2013. p. 16.3.1–16.3.4.

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