Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> (EOT < 1 nm) for low-power logic applications-Reference-Cited by-同舟云学术

Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Kim T.-W.,Kim D.-H.,Koh D. H.,Kwon H. M.,Baek R. H.,Veksler D.,Huffman C.,Matthews K.,Oktyabrsky S.,Greene A.,Ohsawa Y.,Ko A.,Nakajima H.,Takahashi M.,Nishizuka T.,Ohtake H.,Banerjee S. K.,Shin S. H.,Ko D.-H.,Kang C.,Gilmer D.,Hill R. J. W.,Maszara W.,Hobbs C.,Kirsch P. D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724641.pdf?arnumber=6724641

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