Effect of high-pressure deuterium annealing with high-κ stack onto In0.53Ga0.47As MOS capacitors on 300 mm Si substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=11/a=111201/pdf
Reference24 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
3. Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs
4. First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach
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