Study on self-aligned contact oxide etching using C5F8∕O2∕Ar and C5F8∕O2∕Ar∕CH2F2 plasma-Reference-Cited by-同舟云学术

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Study on self-aligned contact oxide etching using C5F8∕O2∕Ar and C5F8∕O2∕Ar∕CH2F2 plasma

Published:2005-07 Issue:4 Volume:23 Page:953-958
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Seung-bum,Choi Dong-goo,Hong Tea-eun,Park Tae-su,Kim Dong-sauk,Song Yong-wook,Kim Chang-il

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1947797

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction;Sensors;2024-05-13

3. Clean SiO₂ atomic layer etching based on physisorption of high boiling point perfluorocarbon;Nanoscale;2024

4. Highly repeatable dry etch corner rounding solution for 0.11 μm shallow trench isolation;Journal of Vacuum Science & Technology B;2022-09

5. Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules;Applied Surface Science;2021-07

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