Clean SiO<sub>2</sub> atomic layer etching based on physisorption of high boiling point perfluorocarbon-Reference-Cited by-同舟云学术

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Clean SiO₂ atomic layer etching based on physisorption of high boiling point perfluorocarbon

Published:2024 Issue:30 Volume:16 Page:14433-14440
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Sung Dain¹^ORCID,Tak Hyunwoo¹,Kim Heeju¹,Kim Dongwoo¹,Kim Kyongnam²,Yeom Geunyoung¹³^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. School of Advanced Materials Engineering, Daejeon University, Daejeon 34520, Republic of Korea

3. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

Abstract

This study aimed to evaluate the SiO2 atomic layer etching (ALE) process that is selective to Si3N4 based on the physisorption of high boiling point perfluorocarbons (HBP PFCs; C5F8, C7F14, C6F6, and C7F8 have boiling points above room temperature).

Funder

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR02085E

Reference30 articles.

1. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

2. Difference between C4F8 and C5F8 plasmas in surface reaction processes for selective etching of SiO2 over Si3N4

3. Exposed area ratio dependent etching in a submicron self-aligned contact etching

4. Selective Enhancement of SiO[sub 2] Etch Rate by Ar-Ion Implantation for Improved Etch Depth Control

5. (Invited) FinFET Flash Memory Technology

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