Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact-Reference-Cited by-同舟云学术

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Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

Published:2009-06 Issue:17 Volume:255 Page:7831-7833
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bobade Santosh M.,Shin Ji-Hoon,Cho Young-Je,You Jung-Sun,Choi Duck-Kyun

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

2. High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Amorphous oxide channel TFTs

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1. Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors;Journal of Physics D: Applied Physics;2021-11-04

2. Sensitivity Enhancement of Dual Gate Field-Effect Transistors Using Stacked Bottom Gate Dielectrics;ACS Applied Electronic Materials;2020-08-04

3. Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor;Ceramics International;2020-06

4. Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics;RSC Advances;2019

5. Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature;Semiconductor Science and Technology;2018-07-17

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