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Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor

  • Published:2020-06 Issue:8 Volume:46 Page:10121-10129
  • ISSN:0272-8842
  • Container-title:Ceramics International
  • language:en
  • Short-container-title:Ceramics International

Author:

Kim Jae-Hwan,Ngoc Van Tran Thi,Oh Jiwon,Bae Seung-Muk,Lee Sang Ick,Shong Bonggeun,Hwang Jin-Ha

Funder

National Research Foundation of Korea

Ministry of Education

Ministry of Science and ICT

KNPA

MSIT

MOTIE

ME

NFA

National Supercomputing Center

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Metal oxides for optoelectronic applications;Yu;Nat. Mater.,2016

2. High-k gate dielectrics for emerging flexible and stretchable electronics;Wang;Chem. Rev.,2018

3. High dielectric constant materials for nanoscale devices and beyond;Iwai;Electrochem. Soc. Interface,2017

4. Perspective: new process technologies required for future devices and scaling;Clark;Apl. Mater.,2018

5. Technology scaling challenges and opportunities of memory devices;Lee,2016

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