Effects of Al Precursors on the Characteristics of Indium–Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Effects of Al Precursors on the Characteristics of Indium–Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Published:2021-08-15 Issue:33 Volume:13 Page:40134-40144
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Seunghee¹,Kim Miso²,Mun Geumbi¹,Ko Jongbeom¹,Yeom Hye-In¹^ORCID,Lee Gwang-Heum¹,Shong Bonggeun²^ORCID,Park Sang-Hee Ko¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

2. Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Institute for Advancement of Technology

National Supercomputing Center

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c11304

Reference56 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. Review of recent advances in flexible oxide semiconductor thin-film transistors

3. Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

4. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

5. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

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