Effects of Al Precursors on the Characteristics of Indium–Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Author:

Lee Seunghee1,Kim Miso2,Mun Geumbi1,Ko Jongbeom1,Yeom Hye-In1ORCID,Lee Gwang-Heum1,Shong Bonggeun2ORCID,Park Sang-Hee Ko1ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

2. Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Institute for Advancement of Technology

National Supercomputing Center

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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