High-performance ultrathin solution-processed SnO2 top-gate thin-film transistors by constructing high-quality dielectric/channel interface-Reference-Cited by-同舟云学术

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High-performance ultrathin solution-processed SnO2 top-gate thin-film transistors by constructing high-quality dielectric/channel interface

Published:2024-05 Issue: Volume:48 Page:104333
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Kuang Fenglan^ORCID,Wang Jinxuan,Zhao Jun,Long Tao^ORCID,Li Zheng

Publisher

Elsevier BV

Reference47 articles.

1. Mobility-stability trade-off in oxide thin-film transistors;Shiah;Nat. Electron,2021

2. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain;Lee;Science,2016

3. Scaled indium oxide transistors fabricated using atomic layer deposition;Si;Nat. Electron.,2022

4. High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors;Magari;Nat. Commun.,2022

5. Approaches for 3D integration using plasma-enhanced atomic-layer-deposited atomically-ordered InGaZnO transistors with ultra-high mobility;Kim;Small Methods,2023

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