Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics-Reference-Cited by-同舟云学术

Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

Published:2019 Issue:72 Volume:9 Page:42415-42422
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhou Shangxiong¹²³⁴⁵^ORCID,Zhang Jianhua⁶⁷⁸⁵,Fang Zhiqiang⁹⁴⁵^ORCID,Ning Honglong¹²³⁴⁵,Cai Wei¹²³⁴⁵,Zhu Zhennan¹²³⁴⁵,Liang Zhihao¹²³⁴⁵,Yao Rihui¹²³⁴⁵^ORCID,Guo Dong¹⁰¹¹¹²⁵^ORCID,Peng Junbiao¹²³⁴⁵

Affiliation:

1. Institute of Polymer Optoelectronic Materials and Devices

2. State Key Laboratory of Luminescent Materials and Devices

3. South China University of Technology

4. Guangzhou 510640

5. China

6. Key Laboratory of Advanced Display and System Applications of Ministry of Education

7. Shanghai University

8. Shanghai 200072

9. State Key Laboratory of Pulp and Paper Engineering South China University of Technology

10. School of Materials Science and Engineering

11. Beihang University

12. Beijing 100191

Abstract

In this paper, a solution-processed zirconium oxide (ZrO₂) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA06132K

Reference25 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices