Sensitivity Enhancement of Dual Gate Field-Effect Transistors Using Stacked Bottom Gate Dielectrics-Reference-Cited by-同舟云学术

Sensitivity Enhancement of Dual Gate Field-Effect Transistors Using Stacked Bottom Gate Dielectrics

Author:

Bhatt Deepa¹²,Panda Siddhartha¹²³⁴^ORCID

Affiliation:

1. Materials Science Programme, IIT Kanpur, Kanpur 208016, India

2. Samtel Centre for Display Technologies, IIT Kanpur, Kanpur 208016, India

3. Department of Chemical Engineering, IIT Kanpur, Kanpur 208016, India

4. National Centre for Flexible Electronics, IIT Kanpur, Kanpur 208016, India

Funder

Ministry of Electronics and Information technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference48 articles.

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