Investigation of Factors, Affecting the Behaviour of I<sub>d</sub>–V<sub>g</sub> Shift in MOSFET-Reference-Cited by-同舟云学术

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Investigation of Factors, Affecting the Behaviour of I_d–V_g Shift in MOSFET

Published:2024-02-29 Issue: Volume:4 Page:1-5
ISSN:
Container-title:2024 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE)
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Author:

Chukhraev Igor V.¹,Drach Vladimir E.²

Affiliation:

1. Bauman Moscow State Technical University,Computer Science and Control Department,Moscow,Russian Federation

2. Sochi State University,Department of Innovative, Engineering and Digital Technologies,Sochi,Russian Federation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10479558/10479559/10479923.pdf?arnumber=10479923

Reference18 articles.

1. Tunable low-loss silicon nitride integrated circuits

2. Monolithic transistor switch for microwave radiometry

3. Low-loss silicon nitride photonic ICs for near-infrared wavelength bandwidth

4. Integrated membrane-free thermal flow sensor for silicon-on-glass microfluidics

5. Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields

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