Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aacec0/pdf
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1. Recent progress in transparent oxide semiconductors: Materials and device application
2. Embedded Memory and ARM Cortex-M0 Core Using 60-nm C-Axis Aligned Crystalline Indium–Gallium–Zinc Oxide FET Integrated With 65-nm Si CMOS
3. Amorphous (In2O3)x(Ga2O3)y(ZnO)1−x−y thin films with high mobility fabricated by pulsed laser deposition
4. Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing
5. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)
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