Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)-Reference-Cited by-同舟云学术

Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Published:2016-08-29 Issue:36 Volume:8 Page:23820-23826
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Choong-Ki¹,Kim Eungtaek¹,Lee Myung Keun¹,Park Jun-Young¹,Seol Myeong-Lok²,Bae Hagyoul¹,Bang Tewook¹,Jeon Seung-Bae¹,Jun Sungwoo³,Park Sang-hee K.⁴,Choi Kyung Cheol¹,Choi Yang-Kyu¹

Affiliation:

1. School of Electrical Engineering (EE), Korea Advanced Institution of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. NASA Ames Research Center, Moffett Field, California 94035, United States

3. College of Engineering, Korea University, Seoul 136-713, Republic of Korea

4. Department of Material Science and Engineering, KAIST, Daejeon 34141, Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b06377

Reference40 articles.

1. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

4. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

5. Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors

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