Author:
Bae Hagyoul,Lee Khwang-Sun,Ye Peide D.,Park Jun-Young
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-cap-free Gate Stack and Optimizing the Channel Strain;Arimura;IEEE Symp. VLSI Tech.,2020
2. Vertically stacked gate-all-around Si nanowire transistors: Key process optimizations and ring oscillator demonstration;Mertens;IEDM Tech. Dig.,2017
3. Vacuum nanoelectronics: Back to the future?—Gate insulated nanoscale vacuum channel transistor;Han;Appl Phys Lett,2012
4. Nanoscale vacuum channel transistors fabricated on silicon carbide wafers;Han;Nature Electron.,2019
5. Localized Electrothermal annealing with nanowatt power for a silicon nanowire field-effect transistor;Park;ACS Appl Mater Interfaces,2018
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献