Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Published:2013-02 Issue: Volume:267 Page:159-163
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Vallo Martin,Lalinský Tibor,Dobročka Edmund,Vanko Gabriel,Vincze Andrej,Rýger Ivan

Funder

MORGaN European project

Slovak Research and Development Agency

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference10 articles.

1. Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing;Jeon;Appl. Phys. Lett.,2003

2. Thermally stable Ir Schottky contact on AlGaN/GaN heterostructure;Jeon;Appl. Phys. Lett.,2003

3. Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructure;Jeon;J. Appl. Phys.,2004

4. Thermally stable AlGaN/GaN heterostructure field-effect transistor with IrO2 gate electrode;Jeon;J. Vac. Sci. B,2006

5. Thermally stable Ru–Si–O gate electrode for AlGaN/GaN HEMT;Kaminska;Phys. Stat. Sol. (C),2005

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs;physica status solidi (a);2017-09-29

2. Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices;Solid-State Electronics;2015-12

3. Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer;Japanese Journal of Applied Physics;2013-11-01

4. Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation;Applied Surface Science;2013-10

5. MEMS pressure sensor fabricated by advanced bulk micromachining techniques;SPIE Proceedings;2013-05-17

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