Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2. High-power AlGaN/GaN HEMTs for Ka-band applications
3. AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio
4. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors
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1. Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer;Applied Surface Science;2021-12
2. Steering electron transfer using interface engineering on front-illuminated robust BiVO4 photoanodes;Nano Energy;2021-11
3. ZnO-SnO2 nanocomposites modified by PdO nanoparticles named PdO-ZSO as gas sensing material for hydrogen and butane with the excellent response time and recovery time;Journal of Materials Science: Materials in Electronics;2021-10-28
4. Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures;Science of Advanced Materials;2021-02-01
5. Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring;Semiconductor Science and Technology;2020-10-14
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