Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1583140
Reference8 articles.
1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2. Recessed 0.25 [micro sign]m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE
3. Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N
4. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy
5. Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma
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