Thermally stable Ru‐Si‐O gate electrode for AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

Thermally stable Ru‐Si‐O gate electrode for AlGaN/GaN HEMT

Published:2005-02 Issue:3 Volume:2 Page:1060-1064
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kaminska E.¹,Piotrowska A.¹,Szczesny A.¹²,Kuchuk A.¹,Lukasiewicz R.¹,Golaszewska K.¹,Kruszka R.¹,Barcz A.¹³,Jakiela R.³⁴,Dynowska E.³,Stonert A.⁵,Turos A.⁴⁵

Affiliation:

1. Institute of Electron Technology, Al. Lotnikow 32/46, Warszawa 02‐668, Poland

2. Warsaw University of Technology, Institute of Microelectronics & Optoelectronics, ul. Koszykowa 75, Warszawa 00‐662, Poland

3. Institute of Physics, PAS, Al. Lotnikow 32/46, Warszawa 02‐668, Poland

4. Institute of Electronic Materials Technology, 133 Wolczynska, Warszawa 01‐919, Poland

5. Soltan Institute for Nuclear Studies, Hoza 69, Warszawa 00‐681, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460620

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