Transparent Amorphous Ru–Si–O Schottky Contacts to In–Ga–Zn

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Transparent Amorphous Ru–Si–O Schottky Contacts to In–Ga–Zn–O

Published:2015-06 Issue:6 Volume:11 Page:528-532
ISSN:1551-319X
Container-title:Journal of Display Technology
language:
Short-container-title:J. Display Technol.

Author:

Kaczmarski Jakub,Grochowski Jakub,Kaminska Eliana,Taube Andrzej,Dyczewski Jan,Jung Wojciech,Dynowska Elzbieta,Piotrowska Anna

Funder

European Union within European Regional Development Fund through grant Innovative Economy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/9425/7105432/06917005.pdf?arnumber=6917005

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of nonideal leakage current in a-InGaZnO Schottky diode with edge termination structures;Applied Physics Letters;2022-09-26

2. Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes;ACS Applied Materials & Interfaces;2020-10-13

3. Origin of work function engineering of silver oxide for an In–Ga–Zn–O Schottky diode;Applied Surface Science;2020-05

4. Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel;Japanese Journal of Applied Physics;2020-02-28

5. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts;Micromachines;2018-10-25

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