Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel-Reference-Cited by-同舟云学术

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Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel

Published:2020-02-28 Issue:SG Volume:59 Page:SGGJ04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Magari Yusaku^ORCID,Aman S G Mehadi^ORCID,Koretomo Daichi^ORCID,Masuda Kentaro,Shimpo Kenta,Furura Mamoru^ORCID

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab65af/pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine Learning Driven Channel Thickness Optimization in Dual‐Layer Oxide Thin‐Film Transistors for Advanced Electrical Performance;Advanced Science;2023-11-20

2. Defect‐Hydrogen Interactions in Top‐Anode Oxide Semiconductor Schottky Barrier Diode;Advanced Materials Technologies;2023-06-26

3. Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias;IEEE Electron Device Letters;2023-01

4. Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor;Advanced Electronic Materials;2022-10-18

5. Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H);Nanomaterials;2022-08-26

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