Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes-Reference-Cited by-同舟云学术

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Published:2020-10-13 Issue:42 Volume:12 Page:47739-47746
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Magari Yusaku¹²^ORCID,Aman S. G. Mehadi³^ORCID,Koretomo Daichi³^ORCID,Masuda Kentaro³,Shimpo Kenta³,Makino Hisao³⁴^ORCID,Kimura Mutsumi⁵^ORCID,Furuta Mamoru¹²^ORCID

Affiliation:

1. School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan

2. Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan

3. Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan

4. School of Systems Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan

5. Department of Electronics and Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c12638

Reference66 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

4. Material characteristics and applications of transparent amorphous oxide semiconductors

5. High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C

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