Indium–Gallium–Zinc Oxide (IGZO)-based ReRAM: Material Overview, Latest Development and Technology Perspective

Abstract

This article provides a critical review of the latest developments in indium–gallium–zinc oxide (IGZO)-based resistive random access memory (ReRAM) technology. IGZO is a new amorphous oxide semiconductor (AOS) candidate which has the potential for low temperature processing, making it attractive for flexible electronic applications. However, despite its promise for thin film transistor (TFT) technology, the scope of IGZO for data storage and neuromorphic computation has been barely explored. The present review pertinently sheds light on the topic spanning material discovery to processing methods and finally ReRAM design using IGZO as the switching medium, and also substantiates the research gaps in the IGZO-based ReRAM technology that must be addressed in the near future.