In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier-Reference-Cited by-同舟云学术

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In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier

Published:2014-05-09 Issue:7 Volume:8 Page:625-628
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Kaczmarski Jakub,Grochowski Jakub,Kaminska Eliana,Taube Andrzej,Jung Wojciech,Piotrowska Anna

Funder

European Union within European Regional Development Fund, through grant Innovative Economy

European Union in the framework of the European Social Fund through the Warsaw University of Technology Development Program

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201409124/fullpdf

Reference13 articles.

1. M. Grundmann The Physics of Semiconductors (Springer, Leipzig, 2006).

2. ZnO Schottky barriers and Ohmic contacts

3. Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

4. Silver oxide Schottky contacts on n-type ZnO

5. High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts

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1. Schottky barrier diodes fabricated with metal oxides AgOx/IGZO;Microelectronic Engineering;2020-02

2. Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits;IEEE Access;2020

3. Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs;IEEE Transactions on Electron Devices;2019-08

4. Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications;Japanese Journal of Applied Physics;2019-06-05

5. IGZO MESFET with enzyme-modified Schottky gate electrode for glucose sensing;Japanese Journal of Applied Physics;2019-05-13

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