Analysis of Ge segregation in Si using a simultaneous growth and exchange model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Ge profile from the growth of SiGe buried layers by molecular beam epitaxy
2. Concentration dependence of Ge segregation during the growth of a SiGe buried layer
3. Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy
4. Reverse temperature dependence of Ge surface segregation during Si‐molecular beam epitaxy
5. Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
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