Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112277
Reference16 articles.
1. Ge profile from the growth of SiGe buried layers by molecular beam epitaxy
2. Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy
3. Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAs
4. Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
5. Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxy
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