Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy

Published:1993-05 Issue:3 Volume:11 Page:1097
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Brunner J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon-Germanium: Properties, Growth and Applications;Springer Handbook of Electronic and Photonic Materials;2017

2. Silicon–Germanium: Properties, Growth and Applications;Springer Handbook of Electronic and Photonic Materials;2006

3. Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures;Physics of the Solid State;2004-01

4. Photoluminescence of self‐assembled Ge islands grown on Si by MBE at low temperatures;physica status solidi (c);2003-06-18

5. Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature;Semiconductors;2003-02

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