Photoluminescence of self‐assembled Ge islands grown on Si by MBE at low temperatures-Reference-Cited by-同舟云学术

Photoluminescence of self‐assembled Ge islands grown on Si by MBE at low temperatures

Published:2003-06-18 Issue:4 Volume: Page:1262-1266
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Rzaev M. M.¹,Burbaev T. M.¹,Kurbatov V. A.¹,Melnik N. N.¹,Mühlberger M.²,Pogosov A. O.¹,Schäffler F.²,Sibeldin N. N.¹,Tsvetkov V. A.¹,Werner P.³,Zakharov N. D.³,Zavaritskaya T. N.¹

Affiliation:

1. P.N. Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, 119991 Moscow, Russia

2. Institut für Halbleiter‐ und Festkörperphysik, Johannes Kepler Universität Linz, Altenbergerstraße, 4040 Linz, Austria

3. Max‐Planck‐Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle (Saale), Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303064

Reference9 articles.

1. RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

2. Optical properties of germanium monolayers on silicon

3. Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

4. Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands

5. Growth and characterization of self-assembled Ge-rich islands on Si

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1. Self-assembled asymmetric membrane containing micron-size germanium for high capacity lithium ion batteries;RSC Advances;2015

2. Ge dots and nanostructures grown epitaxially on Si;Journal of Physics: Condensed Matter;2006-02-10

3. Advances in the growth and characterization of Ge quantum dots and islands;Journal of Materials Research;2005-12-01

4. Morphological Transformation of a Germanium Layer Grown on a Silicon Surface by Molecular-Beam Epitaxy at Low Temperatures;Physics of the Solid State;2005

5. Self-Assembled Si1-x Ge x Dots and Islands;Nanostructure Science and Technology