Ge profile from the growth of SiGe buried layers by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108272
Reference12 articles.
1. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
2. Detection of magnetic resonance on photoluminescence from a Si/Si_{1-x}Ge_{x} strained-layer superlattice
3. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
4. A Si0.7Ge0.3strained‐layer etch stop for the generation of thin layer undoped silicon
5. Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop
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