Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop-Reference-Cited by-同舟云学术

Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop

Published:1990-10-01 Issue:10 Volume:137 Page:3219-3223
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Godbey D. J.¹²,Twigg M. E.¹²,Hughes H. L.¹²,Palkuti L. J.¹²,Leonov P.¹²,Wang J. J.¹²

Affiliation:

1. Naval Research Laboratory, Electronics Science and Technology Division, Washington, D.C. 20375‐5000

2. ARACOR, Sunnyvale, California 94086

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086190/pdf

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