Dose-dependent thermal oxidation of Ge+-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Thickness-dependent stress-relaxation in thin SGOI structures and its improvement
2. Thermal oxidation of As and Ge implanted Si()
3. Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices
4. Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection
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1. Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon;Vacuum;2019-02
2. Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-on-insulator substrates;Chinese Science Bulletin;2014-01-01
3. Thermal oxidation of Ge-implanted Si: Role of defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
4. Effect of hydrogen implantation in 6H-SiC before and after thermal oxidation;The European Physical Journal Applied Physics;2011-07
5. Compositional and Strain Characterization of Ion-Beam-Synthesized Ge x Si1−x Thin Films;Journal of Electronic Materials;2009-12-29
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