Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices-Reference-Cited by-同舟云学术

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Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

Published:2004-06 Issue:1-3 Volume:109 Page:78-84
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Olsen S.H,O’Neill A.G,Norris D.J,Cullis A.G,Bull S.J,Chattopadhyay S,Kwa K.S.K,Driscoll L.S,Waite A.M,Tang Y.T,Evans A.G.R

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Generalized guide for MOSFET miniaturization

2. Deep submicron CMOS based on silicon germanium technology

3. Physics and applications of GexSi1-x/Si strained-layer heterostructures

4. Surface morphology of related GexSi1−xfilms

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices;IEEE Transactions on Electron Devices;2011-11

2. Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers;Applied Surface Science;2008-12

3. Impact strain engineering on gate stack quality and reliability;Solid-State Electronics;2008-08

4. Paramagnetic point defects at interfacial layers in biaxial tensile strained (100)Si/SiO2;Journal of Applied Physics;2008-02

5. Dose-dependent thermal oxidation of Ge+-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08

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