Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers-Reference-Cited by-同舟云学术

Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

Published:2008-12 Issue:5 Volume:255 Page:2971-2977
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bera M.K.,Mahata C.,Bhattacharya S.,Chakraborty A.K.,Armstrong B.M.,Gamble H.S.,Maiti C.K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Strained-Si Heterostructure Field Effect Devices;Maiti,2007

2. Strained Silicon Heterostructures: Materials and Devices;Maiti,2001

3. S. Bhattacharya, J. McCarthy, B.M. Armstrong, H.S. Gamble, S.K. Samanta, C.K. Maiti, T. Perova, A. Moore, Proceedings of 12th International Workshop on the Physics of Semiconductor Devices, Chennai, 2003, p. 164.

4. Surface roughness and interface engineering for gate dielectrics on strained layers

5. Determination of band offsets in strained-Si heterolayers

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