Thermal oxidation of Ge-implanted Si: Role of defects
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference29 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices,2007
3. Oxidation Behavior of Strained SiGe Layer on Silicon Substrate in Both Dry and Wet Ambient
4. Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Comparative studies of the optical absorption coefficient spectra in the implanted layers in silicon with the use of nondestructive spectroscopic techniques;Metrology and Measurement Systems;2023-07-26
2. Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon;Physica B: Condensed Matter;2020-02
3. On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry;Journal of Electronic Materials;2019-06-11
4. Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon;Vacuum;2019-02
5. Properties of silicon implanted with Fe+, Ge+, Mn+ ions investigated using a frequency contactless modulated free-carrier absorption technique;Optical Materials;2018-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3