Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection-Reference-Cited by-同舟云学术

Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection

Published:2005-02 Issue:1-3 Volume:8 Page:219-224
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Spadafora M.,Terrasi A.,Mirabella S.,Piro A.,Grimaldi M.G.,Scalese S.,Napolitani E.,Di Marino M.,De Salvador D.,Carnera A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Eberl K, Wegsheider W. In: Mahajan S, editor. Handbook on semiconductors, vol. 3. Elsevier Science: Amsterdam, 1994.

2. Preparation and properties of the GeSi-oxide system;Jain;Thin Solid Films,1996

3. Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient;Spadafora;Appl Phys Lett,2003

4. Napolitani E, Di Marino M, De Salvador D, Carnera A, Spadafora M, Mirabella S, Scalese S, Terrasi A. Silicon interstitial injection during dry oxidation of SiGe/Si layers. Appl Phys Lett, submitted for publication.

5. Vizkelethy G. In: Tesmer JR, Nastasi M, editors. Handbook of modern ion beam materials analysis. Materials Research Society: Pittsburgh, 1995.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Ge-rich silicon layers after dry oxidation of Ge implanted silicon;Vacuum;2019-02

2. Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation;ECS Transactions;2016-08-18

3. Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal;Journal of Applied Physics;2013-01-21

4. A comparative analysis of oxidation rates for thin films of SiGeversusSi;physica status solidi (a);2012-08-09

5. Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07