Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1622439
Reference13 articles.
1. Preparation and properties of the GeSi-oxide system
2. X-ray photoelectron spectra of low temperature plasma anodized Si0.84Ge0.16 alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties
3. A diffusional model for the oxidation behavior of Si1−xGex alloys
4. Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation
5. Rapid isothermal processing of strained GeSi layers
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