Preparation and properties of the GeSi-oxide system-Reference-Cited by-同舟云学术

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Preparation and properties of the GeSi-oxide system

Published:1993-02 Issue:2 Volume:223 Page:348-357
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jain S.C,Balk P

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference64 articles.

1. General Relationship for the Thermal Oxidation of Silicon

2. Oxidation of silicon

3. MOS Physics and Technology;Nicollian,1982

4. The SiSiO2 system,1988

5. Insulating Films on Semiconductors 1991,1991

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon;Journal of Materials Science;2017-05-22

2. Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers;Applied Physics Letters;2006-09-11

3. Characterization of radiation-related damage in bulk-grown silicon–germanium detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-06

4. Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection;Materials Science in Semiconductor Processing;2005-02

5. Silicon interstitial injection during dry oxidation of SiGe∕Si layers;Journal of Applied Physics;2005-02

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