Oxidation of silicon-Reference-Cited by-同舟云学术

Oxidation of silicon

Published:1989-08 Issue:2 Volume:60 Page:189-212
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Mott N. F.¹,Rigo S.²,Rochet F.²,Stoneham A. M.³

Affiliation:

1. a Cavendish Laboratory , Madingley Road, Cambridge , CB3 OHE , U.K

2. b Groupe de Physique des Solides de I'École Normale Supérieure , Université de Paris VII , Tour 23, 2 Place Jussieu, 75251 , Paris , Cedex , 05 , France

3. c Theoretical Physics Division Harwell Laboratory , Didcot Oxon OX 11 ORA, U.K

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818908211190

Reference89 articles.

1. Electron self‐trapping in SiO2

2. Augustus , P. D. Spiller , G. D. T. Dowsett , M. G. Kightly , P. Thomas , G. R. Webb , R. and Clark , E. A. 1988. SIMS VI, 458New York: Wiley.

3. The oxidation of silicon by dry oxygen can we distinguish between models?

4. An Overview of Electron Paramagnetic Resonance Studies of Si-SiO₂ Interface States

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