Abstract
The melt-growth of high quality, single crystal ingots of elemental and compound semiconductors to be used for microelectronic or optoelectronic applications, and their further use for the fabrication of microelectronic or optoelectronic devices depend on the thermodynamic stability of their molten phases, on the presence of point and extended defects, and on deviations from the stoichiometry in the case of compound semiconductors. The aim of this chapter is to give a detailed account of these items for selected elemental and compound semiconductors.
Publisher
Royal Society of Chemistry