MATERIALS PROPERTIES OF NITRIDES: SUMMARY-Reference-Cited by-同舟云学术

MATERIALS PROPERTIES OF NITRIDES: SUMMARY

Published:2004-03 Issue:01 Volume:14 Page:1-19
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

RUMYANTSEV SERGEY L.¹,SHUR MICHAEL. S.¹,LEVINSHTEIN MICHAEL E.²

Affiliation:

1. Department of Electrical, Computer, and Systems Engineering Center for Broadband Data Transport Science and Technology CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA

2. Solid State Electronics Division, The Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021, St. Petersburg, Russia

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S012915640400220X

Reference119 articles.

1. Survey of Semiconductor Physics

2. Structure-Property Relations

3. Optical behavior near the fundamental absorption edge of sputter‐deposited microcrystalline aluminum nitride

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (b);2024-05-28

2. Thermochemistry of Semiconductors;Chemistry of Semiconductors;2023-11-24

3. In situ cavity length control of GaN-based vertical-cavity surface-emitting lasers with in situ reflectivity spectra measurements;Japanese Journal of Applied Physics;2023-06-01

4. Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode;Journal of Nanophotonics;2023-05-23

5. Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes;2023-03-01