The oxidation of silicon by dry oxygen can we distinguish between models?-Reference-Cited by-同舟云学术

The oxidation of silicon by dry oxygen can we distinguish between models?

Published:1987-06 Issue:6 Volume:55 Page:685-710
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Blanc Joseph¹²

Affiliation:

1. a R.C.A. Laboratories , P.O. Box 432, Princeton , New Jersey , 08543-0432 , U.S.A.

2. b 12 Willow St., Princeton , New Jersey , 08542 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818708218374

Reference24 articles.

1. Blanc , J. 1978a. Semiconductor Characterization Technique, Edited by: Barnes , P. A. and Rozgonyi , G. A. 139Pennington, NJ: The Electrochemical Society. 1978b,Appl. Phys. Lett.,33, 424; 1986, Extended Abstracts, Fall Meeting of the Electrochemical Society, Vol. 86-2 (Pennington, NJ: The Electrochemical Society), p. 542.

2. Isotope Labeling Studies of the Oxidation of Silicon at 1000° and 1300°C

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Varying internal parameters in the thermal silicon oxidation;Journal of Solid State Electrochemistry;2019-07-27

2. Revealing two components of oxidant flux for thermal oxidation of silicon contrary to several models;Journal of Materials Science;2016-09-01

3. A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness;Advances in Condensed Matter Physics;2016

4. Lagging Behavior in other Transport Processes;Macro- to Microscale Heat Transfer;2014-09-26

5. Obtaining model-independent growth rates from experimental data of dry thermal oxidation of silicon;AIChE Journal;2014-01-29