Revealing two components of oxidant flux for thermal oxidation of silicon contrary to several models

Author:

Saad A. M.,Malyutina-Bronskaya V.ORCID,Zalesski V.,Maser K.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference19 articles.

1. Lee WJ, Han CH, Park J-K, Lee Y-S, Ra S-K (2010) Investigation of silicon oxide thin films prepared by atomic layer deposition using SiH2Cl2 and O3 as the precursors. Jpn J Appl Phys 49(3A):071504-1–071504-10

2. Ashok A, Pal P (2014) Investigation of anodic silicon dioxide thin films for microelectromechanical systems applications. Micro Nano Lett 9(12):830–841

3. Shi Z, Shao S, Wang Y (2011) Improved the surface roughness of silicon nanophotonic devices by thermal oxidation method. J Phys 276:012087-1–012087-7

4. Bongiorno A, Pasquarello A (2004) Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation. Phys Rev B 70:195312–1–195312–12

5. Plummer JD, Deal MD, Griffin PB (2000) Silicon VLSI technology: fundamentals, practice and modeling. Prentice Hall, New York

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