Silicon interstitial injection during dry oxidation of SiGe∕Si layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1844606
Reference20 articles.
1. Preparation and properties of the GeSi-oxide system
2. Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient
3. A diffusional model for the oxidation behavior of Si1−xGex alloys
4. Nonequilibrium point defects and diffusion in silicon
5. Theoretical model for self‐interstitial generation at the Si/SiO2interface during thermal oxidation of silicon
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